Error detection and correction in semiconductor structures

ABSTRACT

A semiconductor structure and a method for operating the same. The semiconductor structure includes a first semiconductor chip and a second semiconductor chip. The first semiconductor chip is on top of and bonded to the second semiconductor chip. The first and second semiconductor chips include a first and a second electric nodes. The second semiconductor chip further includes a first comparing circuit. The semiconductor structure further includes a first coupling via electrically connecting the first electric node of the first semiconductor chip to the first comparing circuit of the second semiconductor chip. The first comparing circuit is capable of (i) receiving an input signal from the second electric node directly, (ii) receiving an input signal from the first electric node indirectly through the first coupling via, and (iii) asserting a first mismatch signal in response to the input signals from the first and second electric nodes being different.

BACKGROUND OF THE INVENTION

1. Technical Field

The present invention relates to error detection and correction in semiconductor structures, and more specifically, to detect and correct errors that may occur in semiconductor devices using chip stacking.

2. Related Art

In the prior art, error detection and correction for semiconductor devices can be made by using identical semiconductor chips on a same printed wire board in which the identical semiconductor chips are connected together via the printed wires on the board. However the number of signals that can be compared (checked) is limited by the number of pins of the semiconductor chip. Therefore, there is a need for a semiconductor chip (and method for operating the same) in which the number of signals that can be compared is not limited by the number of the pins on the semiconductor chip.

SUMMARY OF THE INVENTION

The present invention provides a semiconductor structure, comprising (a) a first semiconductor chip and a second semiconductor chip, wherein the first semiconductor chip is on top of and bonded to the second semiconductor chip, wherein the first semiconductor chip comprises a first electric node, wherein the second semiconductor chip comprises a second electric node, and wherein the second semiconductor chip further comprises a first comparing circuit; and (b) a first coupling via electrically connecting the first electric node of the first semiconductor chip to the first comparing circuit of the second semiconductor chip, wherein the first comparing circuit is capable of: (i) receiving an input signal from the first electric node indirectly through the first coupling via, (ii) receiving an input signal from the second electric node directly, and (iii) asserting a first mismatch signal in response to the input signals from the first and second electric nodes being different.

The present invention also provides a semiconductor structure, comprising (a) a first semiconductor chip, a second semiconductor chip, and a first error checking layer, wherein the first error checking layer is sandwiched between and bonded to the first and second semiconductor chips, wherein the first semiconductor chip comprises a first electric node, wherein the second semiconductor chip comprises a second electric node, wherein the first error checking layer comprises a first comparing circuit; (b) a first coupling via electrically connecting the first electric node of the first semiconductor chip to the first comparing circuit of the first error checking layer; and (c) a second coupling via electrically connecting the second electric node of the second semiconductor chip to the first comparing circuit of the first error checking layer, wherein the first comparing circuit is capable of: (i) receiving an input signal from the first electric node indirectly through the first coupling via, (ii) receiving an input signal from the second electric node indirectly through the second coupling via, and (iii) asserting a first mismatch signal in response to the input signals from the first and second electric nodes being different.

The present invention provides a semiconductor structure operation method, comprising providing a semiconductor structure which includes: (a) a first semiconductor chip and a second semiconductor chip, wherein the first semiconductor chip is on top of and bonded to the second semiconductor chip, wherein the first semiconductor chip comprises a first electric node, wherein the second semiconductor chip comprises a second electric node, and wherein the second semiconductor chip further comprises a first comparing circuit, and (b) a first coupling via electrically connecting the first electric node of the first semiconductor chip to the first comparing circuit of the second semiconductor chip; and using the first comparing circuit to: (a) receive an input from the second electric node directly, (b) receive an input from the first electric node indirectly through the first coupling via, and (c) assert a first mismatch signal in response to signals on the first and second electric nodes being different

The present invention provides the structure (and method for operating the same) in which the number of signals that can be compared are not limited by the number of the pins on the semiconductor chip.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1C illustrate a first digital system, in accordance with embodiments of the present invention.

FIG. 2 illustrates a cross section view of a second digital system, in accordance with embodiments of the present invention.

FIGS. 3A-3B illustrates a cross section view of a third digital system, in accordance with embodiments of the present invention.

FIG. 4 illustrates a cross section view of the fourth digital system, in accordance with embodiments of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

FIGS. 1A-1C illustrate a first digital system 1000, in accordance with embodiments of the present invention. In one embodiment, more specifically, FIG. 1A illustrates a cross section view of the first digital system 1000 comprising a first semiconductor chip 1000 a and a second semiconductor chip 1000 b. The first semiconductor chip 1000 a is on top and bonded to the second semiconductor chip 1000 b. Illustratively, the first semiconductor chip 1000 a comprises a first error checking circuit 1010 a and a first functional circuit 1020 a. Similarly, the second semiconductor chip 1000 b comprises a second error checking circuit 1010 b and a second functional circuit 1020 b. In one embodiment, components of the first error checking circuit 1010 a are dispersed among components of the first functional circuit 1020 a. Similarly, components of the second error checking circuit 1010 b are dispersed among components of the second functional circuit 1020 b. However, for simplicity, the first and second error checking circuits 1010 a and 1010 b are shown separate from the first and second functional circuits 1020 a and 1020 b. In one embodiment, coupling vias 1030 are formed between the first and second error checking circuits 1010 a and 1010 b to transmit checking logic signals between the first and second error checking circuits 1010 a and 1010 b.

FIG. 1B illustrates a first embodiment of the first and second error checking circuits 1010 a and 1010 b and the coupling vias 1030 of FIG. 1A. In one embodiment, more specifically, the first error checking circuit 1010 a comprises a first NAND circuit 1040 a, four exclusive-NOR circuits 1050 a, 1060 a, 1070 a and 1080 a, two OR circuits 1100 a and 1110 a, a first local error latch 1090 a, and a first master error latch 1120 a. Similarly, in one embodiment, the second error checking circuit 1010 b comprises a second NAND circuit 1040 b, four exclusive-NOR circuits 1050 b, 1060 b, 1070 b and 1080 b, two OR circuits 1100 b and 1110 b, a second local error latch 1090 b and a second master error latch 1120 b. The first and second error checking circuits 1010 a and 1010 b are used to identify any mismatch between any pair of four functional latches pairs 1053 a and 1053 b, 1063 a and 1063 b, 1073 a and 1073 b, 1083 a and 1083 b. In one embodiment, the coupling vias 1030 comprise ten coupling vias 1051, 1052, 1061, 1062, 1071, 1072, 1081, 1082, 1111, and 1112.

In one embodiment, the exclusive-NOR circuits 1050 a, 1060 a, 1070 a, and 1080 a receive as inputs (i) from the functional latches 1053 a, 1063 a, 1073 a, and 1083 a directly and (ii) from the functional latches 1053 b, 1063 b, 1073 b, and 1083 b indirectly through the vias 1051, 1061, 1071, and 1081, respectively. Similarly, the exclusive-NOR circuits 1050 b, 1060 b, 1070 b, and 1080 b receive as inputs (i) from the functional latches 1053 b, 1063 b, 1073 b, and 1083 b directly and (ii) from the functional latches 1053 a, 1063 a, 1073 a, and 1083 a indirectly through the vias 1052, 1062, 1072, and 1082, respectively.

In one embodiment, outputs of the first and second NAND circuits 1040 a and 1040 b are connected to the first and second local error latches 1090 a and 1090 b, respectively. In one embodiment, the OR circuits 1100 a and 1100 b have only 3 inputs, but it should be understood that there may be any number of inputs from any number of local error latches. In one embodiment, the OR-circuit 1110 a receives as inputs (i) from the output of the OR-circuit 1100 a directly and (ii) from the output of the OR-circuit 1100 b indirectly through the via 1112. Similarly, the OR-circuit 1110 b receives as inputs (i) from the output of the OR-circuit 1100 b directly and (ii) from the output of the OR-circuit 1100 a indirectly through the via 1111.

In one embodiment, the first and the second functional circuits 1020 a and 1020 b (FIG. 1A) are functionally identical and are operated in lock step which means they are controlled by a same clock signal synchronously. As a result, the contents of the functional latch pairs 1053 a and 1053 b, 1063 a and 1063 b, 1073 a and 1073 b, 1083 a and 1083 b are supposed to be the same. If a mismatch in any of the four functional latch pairs occurs, then a 1 will be generated and sent to the first and second local error latches 1090 a and 1090 b. The contents of the first and second local error latches 1090 a and 1090 b will be sent respectively to the first and second master error latches 1120 a and 1120 b to indicate the mismatch.

FIG. 1C illustrates a second embodiment of the first and second error checking circuits 1010 a and 1010 b and the coupling vias 1030 of FIG. 1A. In one embodiment, more specifically, the first error checking circuit 1010 a comprises a first NAND circuit 1130 a, two exclusive-NOR circuits 1140 and 1150, three OR circuits 1160 a, 1180 a and 1190 a, a first local error latch 1170 a and a first master error latch 1200 a. Similarly, in one embodiment, the second error checking circuit 1010 b comprises a second NAND circuit 1130 b, two exclusive-NOR circuits 1210 and 1220, three OR circuits 1160 b, 1180 b and 1190 b, a second local error latch 1170 b and a second master error latch 1200 b. The first and second error checking circuits 1010 a and 1010 b are used to identify any mismatch between any pair of four functional latches pairs 1141 a and 1141 b, 1151 a and 1151 b, 1211 a and 1211 b, 1221 a and 1221 b. In one embodiment, the coupling vias 1030 comprise eight coupling vias 1212, 1222, 1142, 1152, 1161, 1162, 1191, and 1192.

In one embodiment, the exclusive-NOR circuits 1140 and 1150 receive as inputs (i) from the functional latches 1141 a and 1151 a directly and (ii) from the functional latches 1141 b and 1151 b indirectly through the vias 1142 and 1152, respectively. Similarly, the exclusive-NOR circuits 1210 and 1220 receive as inputs (i) from the functional latches 1211 b and 1221 b directly and (ii) from the functional latches 1211 a and 1221 a indirectly through the vias 1212 and 1222, respectively.

In one embodiment, the OR circuit 1160 a receives as inputs (i) from the output of the NAND circuit 1130 a directly and (ii) from the output of the NAND circuit 1130 b indirectly through the via 1162. Similarly, the OR circuit 1160 b receives as inputs (i) from the output of the NAND circuit 1130 b directly and (ii) from the output of the NAND circuit 1130 a indirectly through the via 1161. In one embodiment, outputs of the OR circuits 1160 a and 1160 b are connected to the first and second local error latches 1170 a and 1170 b, respectively. For simplicity, in FIG. 1C, the OR circuits 1180 a and 1180 b have only 3 inputs, but it should be understood that there may be any number of inputs from any number of local error latches. The OR circuit 1190 a receives as inputs (i) from the output of the OR circuit 1180 a directly and (ii) from the output of the OR circuit 1180 b indirectly through the via 1192. Similarly, the OR circuit 1190 b receives as inputs (i) from the output of the OR circuit 1180 b directly and (ii) from the output of the OR circuit 1180 a indirectly through the via 1191.

In one embodiment, the first and second functional circuits 1020 a and 1020 b (FIG. 1A) are functionally identical and are operated in lock step, which means they are controlled by a same clock signal synchronously. As a result, the contents of the functional latch pairs 1141 a and 1141 b, 1151 a and 1151 b, 1211 a and 1211 b, 1221 a and 1221 b are supposed to be the same. If a mismatch in any of the four functional latch pairs occurs, then a 1 will be generated and sent to the first or second local error latch 1170 a or 1170 b. The contents of the first and second local error latches 1170 a and 1170 b will be sent respectively to the first and second master error latches 1200 a and 1200 b to indicate the mismatch.

FIG. 2 illustrates a second digital system 2000, in accordance with embodiments of the present invention. In one embodiment, more specifically, FIG. 2 illustrates a cross section view of the second digital system 2000 which comprises a first semiconductor chip 2000 a, a second semiconductor chip 2000 b, and a third semiconductor chip 2000 c. The first semiconductor chip 2000 a is on top and bonded to the second semiconductor chip 2000 b. The second semiconductor chip 2000 b is on top and bonded to the third semiconductor chip 2000 c. Illustratively, the first semiconductor chip 2000 a comprises a first error checking circuit 2010 a and a first functional circuit 2020 a. Similarly, the second semiconductor chip 2000 b comprises a second error checking circuit 2010 b and a second functional circuit 2020 b. Similarly, the third semiconductor chip 2000 c comprises a third error checking circuit 2010 c, and a third functional circuit 2020 c. In one embodiment, components of the first error checking circuit 2010 a are dispersed among components of the first functional circuit 2020 a. Similarly, components of the second error checking circuit 2010 b are dispersed among components of the second functional circuit 2020 b. Similarly, components of the third error checking circuit 2010 c are dispersed among components of the third functional circuit 2020 c. However, for simplicity, the first, second and third error checking circuits 2010 a, 2010 b, and 2010 c are shown separate from the first, second and third functional circuits 2020 a, 2020 b, and 2020 c. In one embodiment, coupling vias 2030 are formed between the first and second error checking circuits 2020 a and 2020 b, coupling vias 2040 are formed between the second and third error checking circuits 2020 b and 2020 c to transmit checking logic signals among the first, second, and third error checking circuits 2010 a, 2010 b, and 2010 c.

In one embodiment, the first, second, and third error checking circuits 2010 a, 2010 b, and 2010 c of the second digital system 2000 have components similar to those of the first and second error checking circuits 1010 a and 1010 b of the first digital system 1000 (FIG. 1A).

In one embodiment, the first, second, and third functional circuits 2020 a, 2020 b, and 2010 c are functionally identical and are operated in lock step which means they are controlled by a same clock signal synchronously. As a result, the contents of any three corresponding functional latches in the first, second and third functional circuits 2020 a, 2020 b, and 2020 c are supposed to be the same. If a mismatch in the three functional latches occurs, then a 1 will be generated and sent to the master error latches (not shown) on the first, second, and third error checking circuits 2010 a, 2010 b, and 2010 c to indicate the mismatch. In one embodiment, the second error checking circuit 2010 b comprises a conventional voting logic (not shown), which generates an output equal to the majority content of the three functional latches. For example, if two of the three functional latches (not shown) contain a 1 and the third functional latch (not shown) contains a 0, then the conventional voting logic (not shown) will generate a 1, which is the majority content of the three latches. This value can then be used to correct the value in the miscomparing latch, allowing computation to proceed without further intervention.

FIGS. 3A-3B illustrates a third digital system 3000, in accordance with embodiments of the present invention. In one embodiment, more specifically, FIG. 3A illustrates a cross section view of the third digital system 3000 which comprises a first semiconductor chip 3030 a, a second semiconductor chip 3030 b, and an error checking layer 3040 sandwiched between the first and second functional circuits 3030 a and 3030 b. Illustratively, the error checking layer 3040 comprises all error-checking functions needed for error detection of the entire third digital system 3000. In one embodiment, coupling vias 3010 are formed between the first semiconductor chip 3030 a and the error checking layer 3040, coupling vias 3020 are formed between the second semiconductor chip 3030 b and the error checking layer 3040 to transmit checking logic signals from the first and second functional circuits 3030 a and 3030 b to the error checking circuit 3040.

FIG. 3B illustrates a third embodiment of the first and second functional circuits 3030 a and 3030 b, the error checking layer 3040, and the coupling vias 3010 and 3020 of FIG. 3A. In one embodiment, more specifically, the first semiconductor chip 3030 a comprises four functional latches 3051 a, 3061 a, 3071 a, and 3081 a. Similarly, the second semiconductor chip 3030 b comprises four functional latches 3051 b, 3061 b, 3071 b, and 3081 b. The error checking layer 3040 comprises a NAND circuit 3090, four exclusive-NOR circuits 3050, 3060, 3070 and 3080, an OR circuit 3100, and a master error latch 3110. The error checking layer 3040 is used to identify any mismatch between any pair of four functional latches pairs 3051 a and 3051 b, 3061 a and 3061 b, 3071 a and 3071 b, 3081 a and 3081 b. In one embodiment, the coupling vias 3010 comprise four coupling vias 3053, 3063, 3073, and 3083, whereas the coupling vias 3020 comprise four coupling vias 3054, 3064, 3074, and 3084.

In one embodiment, the exclusive-NOR circuits 3050, 3060, 3070, and 3080 receive as inputs (i) from the functional latches 3051 a, 3061 a, 3071 a, and 3081 a indirectly through the via 3053, 3063, 3073, and 3083 and (ii) from the functional latches 3051 b, 3061 b, 3071 b, and 3081 b indirectly through the via 3054, 3064, 3074, and 3084, respectively. The outputs of the exclusive-NOR circuits 3050, 3060, 3070, and 3080 are the inputs of the NAND circuit 3090. The OR circuit 3100 receives as inputs from many NAND circuits which are similar to the NAND circuit 3090. The output of the OR circuit 3100 is connected to the master error latch 3110 whose output (not shown) is reported back to the first and second semiconductor chips 3030 a and 3030 b, using coupling vias (not shown).

In one embodiment, the first semiconductor chip 3030 a and the second semiconductor chip 3030 b are functionally identical and are operated in lock step which means they are controlled by a same clock signal synchronously. As a result, the contents of the functional latch pairs 3051 a and 3051 b, 3061 a and 3061 b, 3071 a and 3071 b, 3081 a and 3082 b are supposed to be the same. If a mismatch in any of the four functional latch pairs occurs, then a 1 will be generated and sent to the master error latch 3110 to indicate the mismatch.

FIG. 4 illustrates a fourth digital system 4000, in accordance with embodiments of the present invention. In one embodiment, more specifically, FIG. 4 illustrates a cross section view of the fourth digital system 4000 which comprises a first semiconductor chip 4010 a, a second semiconductor chip 4010 b, a third semiconductor chip 4010 c, a first error checking layer 4020 a sandwiched between the first and second functional circuits 4010 a and 4010 b, and a second error checking layer 4020 b sandwiched between the second and third functional circuits 4010 b and 4010 c. Illustratively, the first and second checking logic layers 4020 a and 4020 b comprise all the error checking circuits needed for error detection of the entire fourth digital system 4000. In one embodiment, coupling vias 4030, 4040 and 4050, 4060 are formed between the first semiconductor chip 4010 a and the first error checking layer 4020 a, the first error checking layer 4020 a and second semiconductor chip 4010 b, the second semiconductor chip 4010 b and the second error checking layer 4020 b, the second error checking layer 4020 b and third semiconductor chip 4010 c, respectively to transmit checking logic signals among the first, second, and third functional circuits 4010 a, 4010 b, and 4010 c and the first and second checking logic layer 4020 a, and 4020 b.

In one embodiment, the first and second error checking logic layers 4020 a and 4020 b of the fourth digital system 4000 have components similar to those of the error checking layer 3040 of the third digital system 3000 (FIG. 3A).

In one embodiment, the first, second, and third semiconductor chips 4010 a, 4010 b, and 4010 c are functionally identical and are operated in lock step which means they are controlled by a same clock signal synchronously. As a result, the contents of the corresponding functional latches in the first, second and third functional circuits 4011, 4012, and 4013 are supposed to be the same. If a mismatch in any of the three functional latch triplet occurs, then a 1 will be generated and sent to the master error latches (not shown) in the first and the second error checking circuits 4020 a and 4020 b to indicate the mismatch. In one embodiment, the first error checking layer comprises a conventional voting logic (not shown), which generates an output equal to the majority content of the three functional latches. For example, if two of the three functional latches (not shown) contain a 1 and the third functional latch (not shown) contains a 0, then the conventional voting logic will generate a 1, which is the majority content of the three latches.

In the embodiments described above, 2-way and 3-way redundancies for error checking and correction are shown and described. In general, N-way redundancies for error checking and correction can be done in a similar manner, wherein N is an integer greater than 2. In the higher redundancy cases, the voting method previously described is only one of several methods of error correction that could be implemented within the structures described here.

While particular embodiments of the present invention have been described herein for purposes of illustration, many modifications and changes will become apparent to those skilled in the art. Accordingly, the appended claims are intended to encompass all such modifications and changes as fall within the true spirit and scope of this invention. 

1. A semiconductor structure, comprising: (a) a first semiconductor chip and a second semiconductor chip, wherein the first semiconductor chip is on top of and bonded to the second semiconductor chip, wherein the first semiconductor chip comprises a first electric node, wherein the second semiconductor chip comprises a second electric node, and wherein the second semiconductor chip further comprises a first comparing circuit; and (b) a first coupling via electrically connecting the first electric node of the first semiconductor chip to the first comparing circuit of the second semiconductor chip, wherein the first comparing circuit is capable of: (i) receiving an input signal from the first electric node indirectly through the first coupling via, (ii) receiving an input signal from the second electric node directly, and (iii) asserting a first mismatch signal in response to the input signals from the first and second electric nodes being different.
 2. The structure of claim 1, further comprising a second coupling via, wherein the first semiconductor chip further comprises a third electric node, wherein the second semiconductor chip further comprises a fourth electric node, wherein the second semiconductor chip further comprises a second comparing circuit, wherein the second coupling via electrically connects the third electric node of the first semiconductor chip to the second comparing circuit of the second semiconductor chip, and wherein the second comparing circuit is capable of: (i) receiving an input signal from the third electric node indirectly through the second coupling via, (ii) receiving an input signal from the fourth electric node directly, and (iii) asserting a second mismatch signal in response to the input signals from the third and fourth electric nodes being different.
 3. The structure of claim 2, wherein the second semiconductor chip further comprises a transferring circuit, and wherein the transferring circuit is capable of asserting a local error signal in response to either the first comparing circuit asserting the first mismatch signal or the second comparing circuit asserting the second mismatch signal.
 4. The structure of claim 3, wherein the third electric node is an output of a third functional latch of the first semiconductor chip, wherein the fourth electric node is an output of a fourth functional latch of the second semiconductor chip, wherein the first comparing circuit comprises a first exclusive-NOR circuit, wherein the second comparing circuit comprises a second exclusive-NOR circuit, and wherein the transferring circuit comprises a NAND-circuit.
 5. The structure of claim 1, further comprising a third coupling via, wherein the first semiconductor chip further comprises a fifth electric node, wherein the second semiconductor chip further comprises a sixth electric node, wherein the first semiconductor chip further comprises a third comparing circuit, wherein the third coupling via electrically connects the sixth electric node of the second semiconductor chip to the third comparing circuit of the first semiconductor chip, and wherein the third comparing circuit is capable of: (i) receiving an input signal from the fifth electric node directly, (ii) receiving an input signal from the sixth electric node indirectly through the third coupling via, and (iii) asserting a third mismatch signal in response to the input signals from the fifth and sixth electric nodes being different.
 6. The structure of claim 5, wherein the first electric node is an output of a first functional latch of the first semiconductor chip, wherein the second electric node is an output of a second functional latch of the second semiconductor chip, wherein the fifth electric node is an output of a fifth functional latch of the first semiconductor chip, wherein the sixth electric node is an output of a sixth functional latch of the second semiconductor chip, and wherein the third comparing circuit comprises a third exclusive-NOR circuit.
 7. The structure of claim 1, further comprising a fourth coupling via, wherein the first semiconductor chip further comprises a fourth comparing circuit, wherein the fourth coupling via electrically connects the second electric node of the second semiconductor chip to the fourth comparing circuit of the first semiconductor chip, and wherein the fourth comparing circuit is capable of: (i) receiving an input signal from the first electric node directly, (ii) receiving an input signal from the second electric node indirectly through the fourth coupling via, and (iii) asserting a fourth mismatch signal in response to the input signals from the first and second electric nodes being different.
 8. The structure of claim 7, wherein the fourth comparing circuit comprises a fourth exclusive-NOR circuit.
 9. The structure of claim 1, further comprising a third semiconductor chip, wherein the second semiconductor chip is on top of and bonded to the third semiconductor chip, and wherein the third semiconductor chip includes a seventh electric node.
 10. The structure of claim 9, wherein the second semiconductor chip further comprises a voting logic electrically coupled to the first electric node, the second electric node, and the seventh electric node, and wherein the voting logic is capable of outputting a majority signal of three signals on the first electric node, the second electric node, and the seventh electric node.
 11. The structure of claim 9, wherein the first semiconductor chip, the second semiconductor chip, and the third semiconductor chip are functionally identical, and wherein the seventh electric node is an output of a seventh functional latch of the third semiconductor chip.
 12. A semiconductor structure, comprising: (a) a first semiconductor chip, a second semiconductor chip, and a first error checking layer, wherein the first error checking layer is sandwiched between and bonded to the first and second semiconductor chips, wherein the first semiconductor chip comprises a first electric node, wherein the second semiconductor chip comprises a second electric node, wherein the first error checking layer comprises a first comparing circuit; (b) a first coupling via electrically connecting the first electric node of the first semiconductor chip to the first comparing circuit of the first error checking layer; and (c) a second coupling via electrically connecting the second electric node of the second semiconductor chip to the first comparing circuit of the first error checking layer, wherein the first comparing circuit is capable of: (i) receiving an input signal from the first electric node indirectly through the first coupling via, (ii) receiving an input signal from the second electric node indirectly through the second coupling via, and (iii) asserting a first mismatch signal in response to the input signals from the first and second electric nodes being different.
 13. The structure of claim 12, further comprising a third coupling via and a fourth coupling via, wherein the first semiconductor chip further comprises a third electric node, wherein the second semiconductor chip further comprises a fourth electric node, wherein the first error checking layer further comprises a second comparing circuit, wherein the third coupling via electrically connects the third electric node of the third semiconductor chip to the second comparing circuit of the first error checking layer, wherein the fourth coupling via electrically connects the fourth electric node of the second semiconductor chip to the second comparing circuit of the first error checking layer, and wherein the second comparing circuit is capable of: (i) receiving an input signal from the third electric node indirectly through the third coupling via, (ii) receiving an input signal from the fourth electric node indirectly through the fourth coupling via, and (iii) asserting a second mismatch signal in response to the input signals from the third and fourth electric nodes being different.
 14. The structure of claim 13, wherein the first electric node is an output of a first functional latch of the first semiconductor chip, wherein the second electric node is an output of a second functional latch of the second semiconductor chip, wherein the third electric node is an output of a third functional latch of the first semiconductor chip, wherein the fourth electric node is an output of a fourth functional latch of the second semiconductor chip, wherein the first comparing circuit comprises a first exclusive-NOR circuit, and wherein the second comparing circuit comprises a second exclusive-NOR circuit.
 15. The structure of claim 13, further comprising a transferring circuit, wherein the transferring circuit is capable of asserting a local error signal in response to either the first comparing circuit asserting the first mismatch signal or the second comparing circuit asserting the second mismatch signal.
 16. The structure of claim 15, wherein the transferring circuit comprises a NAND-circuit.
 17. The structure of claim 12, further comprising a third semiconductor chip and a second error checking layer, wherein the second error checking layer is sandwiched between and bonded to the second and third semiconductor chips, wherein the third semiconductor chip further comprises a fifth electric node, wherein the first error checking layer further comprises a voting logic electrically coupled to the first electric node, the second electric node, and the fifth electric node, and wherein the voting logic is capable of outputting a majority signal of three signals on the first electric node, the second electric node, and the fifth electric node.
 18. The structure of claim 17, wherein the fifth electric node is an output of a fifth functional latch of the third semiconductor chip.
 19. A semiconductor structure operation method, comprising providing a semiconductor structure which includes: (a) a first semiconductor chip and a second semiconductor chip, wherein the first semiconductor chip is on top of and bonded to the second semiconductor chip, wherein the first semiconductor chip comprises a first electric node, wherein the second semiconductor chip comprises a second electric node, and wherein the second semiconductor chip further comprises a first comparing circuit, and (b) a first coupling via electrically connecting the first electric node of the first semiconductor chip to the first comparing circuit of the second semiconductor chip; and using the first comparing circuit to: (a) receive an input from the second electric node directly, (b) receive an input from the first electric node indirectly through the first coupling via, and (c) assert a first mismatch signal in response to signals on the first and second electric nodes being different.
 20. The operation method of claim 19, further comprising using a second comparing circuit to: (a) receive an input from a fourth electric node directly, (b) receive an input from a third electric node indirectly through a second coupling via, and (c) assert a second mismatch signal in response to signals on the third and fourth electric nodes being different, wherein the first semiconductor chip further comprises the third electric node, wherein the second semiconductor chip further comprises the fourth electric node, wherein the second semiconductor chip further comprises the second comparing circuit, wherein the second coupling via electrically connects the fourth electric node of the first semiconductor chip to the second comparing circuit of the second semiconductor chip, wherein the first electric node is an output of a first functional latch of the first semiconductor chip, wherein the second electric node is an output of a second functional latch of the second semiconductor chip, wherein the third electric node is an output of a third functional latch of the first semiconductor chip, wherein the fourth electric node is an output of a fourth functional latch of the second semiconductor chip, wherein the first comparing circuit comprises a first exclusive-NOR circuit, and wherein the second comparing circuit comprises a second exclusive-NOR circuit. 